The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

• Current Transfer Ratio — 100 Minimum @ Specified Conditions

• Guaranteed Switching Speeds

• Meets or Exceeds all JEDEC Registered Specifications

• To order devices that are tested and marked per VDE 0884 requirements, the

suffix ”V” must be included at end of part number. VDE 0884 is a test option.

Applications

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• Regulation Feedback Circuits

• Monitor & Detection Circuits

• Solid State Relays