The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.

This series is designed for use in applications requiring high collector output currents at lower input currents.

• Higher Sensitivity to Low Input Drive Current

• Meets or Exceeds All JEDEC Registered Specifications

• To order devices that are tested and marked per VDE 0884 requirements, the suffix “V” must be included at end of part number. VDE 0884 is a test option.

Applications

• Low Power Logic Circuits

• Interfacing and coupling systems of different potentials and impedances

• Telecommunications Equipment

• Portable Electronics

• Solid State Relays