Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Features

＊ Low Forward Voltage.

＊ Low Switching noise.

＊ High Current Capacity

＊ Guarantee Reverse Avalanche.

＊ Guard-Ring for Stress Protection.

＊ Low Power Loss & High efficiency.

＊ 150℃ Operating Junction Temperature

＊ Low Stored Charge Majority Carrier Conduction.

＊ Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O

＊ ESD: 8KV(Min.) Human-Body Model

＊ In compliance with EU RoHs 2002/95/EC directives