DESCRIPTION

RD35HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

FEATURES

1. Supply with Tape and Reel. 500 Units per Reel.

2. Employing Mold Package

3. High Power and High Efficiency

Pout=43Wtyp, Drain Effi.=60typ

@ Vds=12.5V Idq=0.5A Pin=3.0W f=530MHz

Pout=45Wtyp, Drain Effi.=72typ

@ Vds=12.5V Idq=1.0A Pin=3.0W f=175MHz

4. Integrated gate protection diode

APPLICATION

For output stage of high power amplifiers in VHF/UHF band mobile radio sets.