FEATURE

a) Adopting new 5th generation IGBT (CSTBT TM) chip, which

performance is improved by 1µm fine rule process.

For example, typical Vce(sat)=1.55V @Tj=125°C

b) Over-temperature protection by detecting Tj of the CSTBT TM

chips and error output is possible from all each conservation

upper and lower arm of IPM.

c) New small package

Reduce the package size by 10, thickness by 22 from

S-DASH series.

• 2φ 75A, 600V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short

circuit, over-temperature & under-voltage (P-Fo available

from upper arm devices)

• UL Recognized Yellow Card No.E80276(N)

File No.E80271

APPLICATION

Photo voltaic power conditioner