DESCRIPTION

The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 ~ 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

● Internally impedance matched

● High output power

P1dB = 8 W (TYP.) @ f = 10.7 ~ 11.7GHz

● High linear power gain

GLP = 7.0 dB (TYP.) @ f = 10.7 ~ 11.7GHz

● High power added efficiency

ηadd = 26 (TYP.) @ f = 10.7 ~ 11.7GHz

APPLICATION

For use in 10.7 ~ 11.7 GHz band power amplifiers