DESCRIPTION

The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 30W (TYP.) @ f=2.7 - 3.5 GHz

High power gain

GLP = 12 dB (TYP.) @ f=2.7 - 3.5GHz

High power added efficiency

P.A.E. = 36 (TYP.) @ f=2.7 - 3.5GHz

Low distortion [item -51]

IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 2.7 - 3.5 GHz band power amplifier

item 51 : 2.7 - 3.5 GHz band digital radio communication