DESCRIPTION

The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

● Class A operation

● Internally matched to 50 (Ω) system

● High output power

P1dB=30W (TYP.) @f=2.1~2.3GHz

● High power gain

GLP=12dB (TYP.) @f=2.1~2.3GHz

● High power added efficiency

ηadd=45 (TYP.) @f=2.1~2.3GHz

● Loe distortion [item -51]

IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION

item 01 : 2.1~2.3GHz band power amplifier

item 51 : 2.1~2.3GHz band digital radio communication