DESCRIPTION

The MGFL45V1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES (TARGET)

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 32W (TYP.) @ f=1.9 - 2.0 GHz

High power gain

GLP = 13 dB (TYP.) @ f=1.9 - 2.0GHz

High power added efficiency

P.A.E. = 45 (TYP.) @ f=1.9 - 2.0GHz

Low distortion [item -51]

IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 1.9 - 2.0 GHz band power amplifier

item 51 : 1.9 - 2.0 GHz band digital radio communication