位置:M5M5V416BUG-70HI > M5M5V416BUG-70HI详情

M5M5V416BUG-70HI中文资料

厂家型号

M5M5V416BUG-70HI

文件大小

90.17Kbytes

页面数量

10

功能描述

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

4194304-BIT(262144-WORD BY 16-BIT) CMOS STATIC RAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MITSUBISHI

M5M5V416BUG-70HI数据手册规格书PDF详情

DESCRIPTION

The M5M5V416B is a family of low voltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, fabricated by Mitsubishis high-performance 0.25µm CMOS technology .

The M5M5V416B is suitable f or memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.

M5M5V416BUG is packaged in a CSP (chip scale package), with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and ball pitch of 0.75mm. It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.

FEATURES

● Single +2.7~+3.6V power supply

● Small stand-by current: 0.3µA(3V,typ.)

● No clocks, No refresh

● Data retention supply voltage =2.0V to 3.6V

● All inputs and outputs are TTL compatible.

● Easy memory expansion by S1, S2, BC1 and BC2

● Common Data I/O

● Three-state outputs: OR-tie capability

● OE prevents data contention in the I/O bus

● Process technology: 0.25µm CMOS

● Package: 48pin 7mm x 8.5mm CSP

M5M5V416BUG-70HI产品属性

  • 类型

    描述

  • 型号

    M5M5V416BUG-70HI

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    4194304-BIT(262144-WORD BY 16-BIT) CMOS STATIC RAM

更新时间:2025-11-1 10:32:00
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