DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.

The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.

This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

• Standard 40pin SOJ, 44 pin TSOP (II)

• Single 5V±10 supply

• Low stand-by power dissipation

CMOS Input level--------------------------5.5mW (Max)

CMOS Input level--------------------------550µW (Max)*

• Operating power dissipation

M5M44265Cxx-5,-5S--------------------------688mW (Max)

M5M44265Cxx-6,-6S--------------------------605mW (Max)

M5M44265Cxx-7,-7S--------------------------523mW (Max)

• Self refresh capability*

Self refresh current--------------------------150µA (Max)

• Extended refresh capability

Extended refresh current--------------------------150µA (Max)

• Hyper-page mode (512-column random access), Read-modify write, RAS-only refresh, CAS before RAS refresh, Hidden refresh capabilities.

• Early-write mode, OE and W to control output buffer impedance

• 512 refresh cycles every 8.2ms (A0~A8)

• 512 refresh cycles every 128ms (A0~A8)*

• Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M44265CJ,TP-5S,-6S,-7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame Buffer memory for CRT