Coaxial High Power Amplifier

50Ω 100W 20 to 500 MHz

Product Overview

The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50 typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a

maximum junction temperature of 250° C translating into higher operating temperatures without adversely affecting the MTBF.

The Big Deal

• High Efficiency, 50 typ.

• High Output Power, 100W

• GaN Output Stage

• High Output IP2, +84 dBm typ.

• High Output IP3, +60 dBm typ.