General Description

Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features

• XP1006 Driver Amplifier

• 18.0 dB Small Signal Gain

• +31.0 dBm Saturated Output Power

• 35 Power Added Efficiency

• On-chip Gate Bias Circuit

• 100 On-Wafer RF, DC and Output Power Testing

• 100 Visual Inspection to MIL-STD-883 Method 2010