General Description

Mimix Broadband’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features

Self Bias Architecture

Small Size

3.0 or 5.0 V Operation

20.0 dB Small Signal Gain

2.0 dB Noise Figure

+9.0 dBm P1dB Compression Point

100 On-Wafer RF, DC and Noise Figure Testing

100 Visual Inspection to MIL-STD-883 Method 2010