The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.

FEATURES

ULTRA LOW DRIFT | V GS1‐2 / T| ≤ 5µV/°C TYP.

ULTRA LOW LEAKGE IG = 80fA TYP.

LOW NOISE en = 70nV/√Hz TYP.

LOW CAPACITANCE CISS = 3pF MAX

LS830 Applications:

◾ Wideband Differential Amps

◾ High-Speed,Temp-Compensated SingleEnded Input Amps

◾ High-Speed Comparators

◾ Impedance Converters and vibrations detectors.