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VRF151E中文资料

厂家型号

VRF151E

文件大小

129.91Kbytes

页面数量

4

功能描述

RF POWER VERTICAL MOSFET

RF MOSFET(VDMOS) - Bulk

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MICROSEMI

VRF151E数据手册规格书PDF详情

RF POWER VERTICAL MOSFET

The VRF151E is a thermally-enhanced version of the VRF151. It is a gold metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

FEATURES

• Enhanced Package for 30 higher PD

• Improved Ruggedness V(BR)DSS= 170V

• 150W with 22dB Typical Gain @ 30MHz, 50V

• 150W with 14dB Typical Gain @ 175MHz, 50V

• Excellent Stability & Low IMD

• Available in Matched Pairs

• 30:1 Load VSWR Capability at Specified Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• Replacement for SD2931-10 w/higher BV

• RoHS Compliant

VRF151E产品属性

  • 类型

    描述

  • 型号

    VRF151E

  • 制造商

    Microsemi Corporation

  • 功能描述

    RF MOSFET(VDMOS) - Bulk

  • 制造商

    Microsemi Corporation

  • 功能描述

    RF POWER TRANSISTOR MOSFET

更新时间:2026-5-21 11:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MICROSEMI/美高森美
23+
TO-59
8510
原装正品代理渠道价格优势
MICROSEMI/美高森美
26+
196
现货供应