DESCRIPTION

This new line of ‘MELF’ high power PIN diodes are hermetically sealed surface mount packaged devices with full face bonded chips for low inductance construction. The MELF ceramic package has square end terminations which are ideal for surface mount and pick and place operations. The PIN diode chips are coated with a special hard glass passivation which is required for high power applications to enhance the reliability resulting in MTBF’s of greater than one million hours.

• Magnetic/Non-Magnetic“Cer-Met” (MELF) Packages

• Very Low Inductance, Full Faced Bonding

• Hermetic, Low Loss and Low Distortion Applications

• High Volume Manufacturing Capability

• 100 TX Screening Available

APPLICATIONS

These MELF diodes are used as switching, attenuating and phase shifting elements from HF through 2 GHz and have breakdown voltage ratings up to 700 volts. Non-magnetic “Cer-Met” (MELF’s) are also used as switching elements in MRI (magnetic resonance imaging) applications. Conventional magnetic MELF packages are used in cellular, beam steering applications, filter switch banks, and antenna tuning units..