Description

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies.

Features

● High Q Values for Higher Frequency Performance

● Constant Gamma Design

● Low Reverse Current

● Available as Chip or Packaged Diodes

● Available in Chip-on-Board Packaging

● Custom Designs Available

Applications

● VCOs

● Phase-Locked Oscillators

● High Q Tunable Filters

● Phase Shifters

● Pre-Selectors