Features

The following are key features of the MSCSM70AM10CT3AG device:

• SiC Power MOSFET

◦ Low RDS(on)

◦ High-speed switching

◦ Ultra low loss

• SiC Schottky Diode

◦ Zero reverse recovery

◦ Zero forward recovery

◦ Temperature independent switching behavior

◦ Positive temperature coefficient on VF

• Very low stray inductance

• Kelvin source for easy drive

• Internal thermistor for temperature monitoring

• Aluminum nitride (AlN) substrate for improved thermal performance

Applications

The MSCSM70AM10CT3AG device is designed for the following applications:

• Uninterruptible power supplies

• Switched mode power supplies

• EV motor and traction drive

• Welding converters