Product Overview

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over

silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage

applications. The MSC015SMA070B4 device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 4-lead

package with a source sense.

Features

The following are key features of the MSC015SMA070B4 device:

Low capacitances and low gate charge

Fast switching speed due to low internal gate resistance (ESR)

Stable operation at high junction temperature, T = 175 °C J(max)

Fast and reliable body diode

Superior avalanche ruggedness

RoHS compliant

Benefits

The following are benefits of the MSC015SMA070B4 device:

High efficiency to enable lighter, more compact system

Simple to drive and easy to parallel

Improved thermal capabilities and lower switching losses

Eliminates the need for external freewheeling diode

Lower system cost of ownership

Applications

The MSC015SMA070B4 device is designed for the following applications:

PV inverter, converter, and industrial motor drives

Smart grid transmission and distribution

Induction heating and welding

H/EV powertrain and EV charger

Power supply and distribution