DESCRIPTION:

· N-Channel enhancement mode high density IGBT die

· Passivation: Polyimide, 20 um, over Silicon Nitride, .8um

· Emitter Metallization: Al/1Si for aluminum wire bonding, 3.2 um typical.

· Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach

FEATURES:

· Low Forward Voltage Drop, Low Tail Current

· Avalanche and Surge Rated

· High Freq. Switching to 20KHz

· Ultra Low Leakage Current

· RBSOA and SCSOA Rated

· Available with Lot Acceptance Testing Spec MSAGA11F120DL, -L Suffix