DESCRIPTION:

The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.

The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.

Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.

Features

• REFRACTORY/GOLD METALLIZATION

• EMITTER SITE BALLASTED

• 15:1 VSWR CAPABILITY

• LOW RF THERMAL RESISTANCE

• INPUT/OUTPUT MATCHING

• OVERLAY GEOMETRY

• METAL/CERAMIC HERMETIC PACKAGE

• POUT = 30 W MIN. WITH 7.8 dB Gain