DESCRIPTION

The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.

The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single supply of 3.3 volts and a low quiescent current of 70mA the power gain is 19dB 2.4 – 2.5GHz.

KEY FEATURES

◾ Advanced InGaP HBT

◾ 2.4 – 2.5GHz Operation

◾ Single-Polarity 3.3V Supply

◾ Low Quiescent Current ICQ ~70mA

◾ Power Gain ~19dB @ 2.45GHz and Pout = 19dBm

◾ Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM

◾ EVM ~ 3.0 for 64QAM / 54Mbps and Pout = 19dBm

◾ Small Footprint (3 x 3 mm2)

◾ Low Profile (0.9mm)

APPLICATIONS

◾ IEEE 802.11b/g