High Speed PT IGBT

POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

FEATURES

• Fast switching with low EMI

• Very Low Eoff for maximum efficiency

• Ultra low Cres for improved noise immunity

• Low conduction loss

• Low gate charge

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• UPS, solar, and other inverters

• High frequency, high efficiency industrial