DESCRIPTION

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a highgain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23Aand 4N24Acan be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.

Features:

• Collector is electrically isolated from the case.

• Overall current gain...1.5 typical (4N24A)

• Base lead provided for conventional transistor biasing

• Rugged package

• High gain, high voltage transistor

• +1kV electrical isolation

Applications:

• Eliminate ground loops

• Level shifting

• Line receiver

• Switching power supplies

• Motor control