DESCRIPTION

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.

Features:

• High Reliability

• Base lead provided for conventional transistor biasing

• Rugged package

• High gain, high voltage transistor

• +1kV electrical isolation

Applications:

• Eliminate ground loops

• Level shifting

• Line receiver

• Switching power supplies

• Motor control