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HAL581SF-E中文资料

厂家型号

HAL581SF-E

文件大小

1730.62Kbytes

页面数量

36

功能描述

Two-Wire Hall-Effect Sensor Family

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MICRONAS

HAL581SF-E数据手册规格书PDF详情

Introduction

This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points.

Features

– current output for two-wire applications

– low current consumption: 5 mA...6.9 mA

– high current consumption: 12 mA...17 mA

– junction temperature range from −40 °C up to 140 °C.

– operates from 3.75 V to 24 V supply voltage

– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz

– switching offset compensation at typically 145 kHz

– overvoltage and reverse-voltage protection

– magnetic characteristics are robust against mechanical stress effects

– constant magnetic switching points over a wide supply voltage range

– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics

– ideal sensor for applications in extreme automotive and industrial environments

– EMC corresponding to ISO 7637

HAL581SF-E产品属性

  • 类型

    描述

  • 型号

    HAL581SF-E

  • 制造商

    MICRONAS

  • 制造商全称

    MICRONAS

  • 功能描述

    Two-Wire Hall-Effect Sensor Family

更新时间:2025-11-1 9:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Micronas
23+
NA
45000
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2447
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25+
传感器
8796
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TDK
24+
7350
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TDK
24+
-
2000
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24+
N/A
48000
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23+
SOT89
172000
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TDK
2021+
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499
N/A
23+
80000
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