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RC28F128J3F75A中文资料

厂家型号

RC28F128J3F75A

文件大小

2203.01Kbytes

页面数量

66

功能描述

Numonyx짰 Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

IC FLASH 128MBIT 75NS 64EZBGA

数据手册

下载地址一下载地址二到原厂下载

生产厂商

Micron Technology

简称

Micron镁光

中文名称

美国镁光科技有限公司官网

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RC28F128J3F75A数据手册规格书PDF详情

Introduction

This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 µs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx® Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

RC28F128J3F75A产品属性

  • 类型

    描述

  • 型号

    RC28F128J3F75A

  • 功能描述

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    StrataFlash™

  • 标准包装

    2,000

  • 系列

    MoBL® 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 异步

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    45ns

  • 接口

    并联

  • 电源电压

    2.2 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-VFBGA

  • 供应商设备封装

    48-VFBGA(6x8)

  • 包装

    带卷(TR)

更新时间:2025-5-3 18:04:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
2450+
BGA
6541
只做原装正品假一赔十为客户做到零风险!!
micron(镁光)
24+
标准封装
27048
全新原装正品/价格优惠/质量保障
MICRON/美光
24+
BGA64
10000
只有原装
MICRON
24+
BGA
8640
MICRON专营原装进口现货
MICRON
最新
BGA
6800
全新原装公司现货低价
MICRON
24+
BGA QFP
13500
免费送样原盒原包现货一手渠道联系
MICRON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
MICRON/美光
22+
NA
3000
支持任何机构检测 只做原装正品
MICRON/镁光
2021+
BGA
9000
原装现货,随时欢迎询价
micron(镁光)
2023+
N/A
4550
全新原装正品

RC28F128J3F75A 价格

参考价格:¥27.9119

型号:RC28F128J3F75A 品牌:Micron 备注:这里有RC28F128J3F75A多少钱,2025年最近7天走势,今日出价,今日竞价,RC28F128J3F75A批发/采购报价,RC28F128J3F75A行情走势销售排排榜,RC28F128J3F75A报价。

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Micron Technology 美国镁光科技有限公司

中文资料: 6773条

Micron Technology 是一家全球领先的半导体公司,专注于存储和内存解决方案的开发与制造。成立于1978年,总部位于美国爱达荷州博伊西,Micron 的产品包括动态随机存取存储器(DRAM)、闪存(NAND)、以及其他类型的内存和存储组件,广泛应用于个人计算机、移动设备、服务器、数据中心和工业设备等多个领域。公司致力于通过创新与研发推动技术进步,提供高性能、高可靠性的产品,以满足全球客户不断变化的需求。Micron 还积极参与可持续发展和社会责任,致力于在创新与环境保护之间取得平衡。