GENERAL DESCRIPTION

The 1 Meg x 16 DRAM is a randomly accessed, solid state memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.

FEATURES

• JEDEC- and industry-standard x16 timing, functions, pinouts, and packages

• High-performance, low-power CMOS silicon-gate process

• Single power supply (+3.3V ±0.3V or 5V ±0.5V)

• All inputs, outputs and clocks are TTL-compatible

• Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS# (CBR) and HIDDEN

• Optional self refresh (S) for low-power data retention

• BYTE WRITE and BYTE READ access cycles

• 1,024-cycle refresh (10 row, 10 column addresses)

• FAST-PAGE-MODE (FPM) access