位置:TC1413EPA > TC1413EPA详情

TC1413EPA中文资料

厂家型号

TC1413EPA

文件大小

439.72Kbytes

页面数量

14

功能描述

3A High-Speed MOSFET Drivers

功率驱动器IC 3A Sngl Inv

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

MICROCHIP

TC1413EPA数据手册规格书PDF详情

GENERAL DESCRIPTION

The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC1413/1413N can easily switch 1800pF gate capacitance in 20 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater output accuracy.

FEATURES

■ Latch-Up Protected: Will Withstand 500mA Reverse Current

■ Input Will Withstand Negative Inputs Up to 5V

■ ESD Protected .....................................................4kV

■ High Peak Output Current .................................. 3A

■ Wide Operating Range .......................... 4.5V to 16V

■ High Capacitive Load Drive Capability ........................... 180 pF in 20nsec

■ Short Delay Time .................................. 35nsec Typ

■ Consistent Delay Times With Changes in Supply Voltage

■ Matched Delay Times

■ Low Supply Current

— With Logic “1” Input ................................... 50µA

— With Logic “0” Input ................................. 150µA

■ Low Output Impedance .................................... 2.7Ω

■ Pinout Same as TC1410/11/12

TC1413EPA产品属性

  • 类型

    描述

  • 型号

    TC1413EPA

  • 功能描述

    功率驱动器IC 3A Sngl Inv

  • RoHS

  • 制造商

    Micrel

  • 产品

    MOSFET Gate Drivers

  • 类型

    Low Cost High or Low Side MOSFET Driver

  • 电源电压-最大

    30 V

  • 电源电压-最小

    2.75 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2025-10-5 16:36:00
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