PRODUCT DESCRIPTION

The SST39VF1601C and SST39VF1602C devices are

1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured

with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell

design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST39VF160xC writes (Program

or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pinouts for x16

memories.

Featuring high performance Word-Program, the

SST39VF1601C/1602C devices provide a typical

Word-Program time of 7 μsec. These devices use Toggle

Bit, Data# Polling, or the RY/BY# pin to indicate the

completion of Program operation. To protect against

inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications,

these devices are offered with a guaranteed

typical endurance of 100,000 cycles. Data retention is

rated at greater than 100 years.

The SST39VF1601C/1602C devices are suited for

applications that require convenient and economical

updating of program, configuration, or data memory.

For all system applications, they significantly improve

performance and reliability, while lowering power

consumption. They inherently use less energy during

Erase and Program than alternative flash technologies.

The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies.

These devices also improve flexibility while

lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and

Program times, independent of the number of Erase/

Program cycles that have occurred. Therefore the system

software or hardware does not have to be modified

or de-rated as is necessary with alternative flash technologies,

whose Erase and Program times increase

with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39VF1601C/1602C are offered in 48-lead TSOP,

48-ball TFBGA, and 48-ball WFBGA packages. See

Figures 4-1, 4-2, and 4-3 for pin assignments.

FEATURES

• Organized as 1M x16: SST39VF1601C/1602C

• Single Voltage Read and Write Operations

- 2.7-3.6V

• Superior Reliability

- Endurance: 100,000 Cycles (Typical)

- Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5

MHz)

- Active Current: 9 mA (typical)

- Standby Current: 3 μA (typical)

- Auto Low Power Mode: 3 μA (typical)

• Hardware Block-Protection/WP# Input Pin

- Top Block-Protection (top 8 KWord)

- Bottom Block-Protection (bottom 8 KWord)

• Sector-Erase Capability

- Uniform 2 KWord sectors

• Block-Erase Capability

- Flexible block architecture; one 8-, two 4-, one

16-, and thirty one 32-KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Latched Address and Data

• Security-ID Feature

- SST: 128 bits; User: 128 words

• Fast Read Access Time:

- 70 ns

• Fast Erase and Word-Program:

- Sector-Erase Time: 18 ms (typical)

- Block-Erase Time: 18 ms (typical)

- Chip-Erase Time: 40 ms (typical)

- Word-Program Time: 7 μs (typical)

• Automatic Write Timing

- Internal VPP Generation

• End-of-Write Detection

- Toggle Bits

- Data# Polling

- Ready/Busy# Pin

• CMOS I/O Compatibility

• JEDEC Standard

- Flash EEPROM Pinouts and command sets

• Packages Available

- 48-lead TSOP (12mm x 20mm)

- 48-ball TFBGA (6mm x 8mm)

- 48-ball WFBGA (4mm x 6mm)

• All devices are RoHS compliant