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SST26VF016BT-104VSLASHSM中文资料

厂家型号

SST26VF016BT-104VSLASHSM

文件大小

2192.31Kbytes

页面数量

84

功能描述

2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MICROCHIP

SST26VF016BT-104VSLASHSM数据手册规格书PDF详情

Product Description

The Serial Quad I/O™ (SQI™) family of Flash memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF016B also supports

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI Flash devices occupy less board space and

ultimately lower system costs.

All members of the 26 Series SQI family are

manufactured with proprietary, high-performance

CMOS SuperFlash® technology. The split-gate cell

design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with

alternate approaches.

SST26VF016B significantly improves performance and

reliability, while lowering power consumption. These

devices write (Program or Erase) with a single power

supply of 2.3V-3.6V. The total energy consumed is a

function of the applied voltage, current and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy consumed

during any Erase or Program operation is less

than alternative Flash memory technologies.

Features

• Single Voltage Read and Write Operations:

- 2.7V-3.6V or 2.3V-3.6V

• Serial Interface Architecture:

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- Mode 0 and Mode 3

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High-Speed Clock Frequency:

- 2.7V-3.6V: 104 MHz maximum

- 2.3V-3.6V: 80 MHz maximum

• Burst Modes:

- Continuous linear burst

- 8/16/32/64-byte linear burst with wrap-around

• Superior Reliability:

- Endurance: 100,000 Cycles (minimum)

- Greater than 100 years data retention

• Low-Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby current: 15 μA (typical)

• Fast Erase Time:

- Sector/Block Erase: 18 ms (typical), 25 ms

(maximum)

- Chip Erase: 35 ms (typical), 50 ms

(maximum)

• Page Program:

- 256 bytes per page in x1 or x4 mode

• End-of-Write Detection:

- Software polling the BUSY bit in STATUS register

• Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Four 8-Kbyte top and bottom parameter overlay

blocks

- One 32-Kbyte top and bottom overlay blocks

- Uniform 64-Kbyte overlay blocks

• Write Suspend:

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection:

- Individual Block Write Protection with permanent

lock-down capability

- 64-Kbyte blocks, two 32-Kbyte blocks and

eight 8-Kbyte parameter blocks

- Read Protection on top and bottom 8-Kbyte

parameter blocks

• Security ID:

- One-Time-Programmable (OTP) 2-Kbyte,

Secure ID

- 64-bit unique, factory pre-programmed

identifier

- User-programmable area

• Temperature Range:

- Industrial: -40°C to +85°C

- Industrial Plus: -40°C to +105°C

- Extended: -40°C to +125°C

• Automotive AEC-Q100 Qualified

• All devices are RoHS compliant

更新时间:2025-10-19 16:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Microchip
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Microchip
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电联咨询
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Microchip
2023+
8WDFN
3830
安罗世纪电子只做原装正品货
Microchip
23+
NA
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原装正品,力挺实单
Microchip(微芯)
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Microchip(微芯)
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8-SOIC(0.154
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电子元器件采购降本30%!原厂直采,砍掉中间差价