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SAM3X8ERT-DHB-HP中文资料

厂家型号

SAM3X8ERT-DHB-HP

文件大小

14047.08Kbytes

页面数量

1168

功能描述

Radiation-Tolerant 32-bit Arm짰 Cortex짰-M3 Microcontroller

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MICROCHIP

SAM3X8ERT-DHB-HP数据手册规格书PDF详情

INTRODUCTION

SAM3X8ERT is a radiation-tolerant Arm® Cortex®-M3 RISC processor. It operates at a maximum speed of 84 MHz and

features 512 Kbytes of Flash and 100 Kbytes of SRAM. The peripheral set includes a High Speed USB Host and Device

port with embedded transceiver, an Ethernet MAC, 2 CANs, a High Speed MCI for SDIO/SD/MMC, an External Bus

Interface with NAND Flash Controller (NFC), 5 UARTs, 2 TWIs, 4 SPIs, as well as a PWM timer, three 3-channel general-

purpose 32-bit timers, a low-power RTC, a low-power RTT, 256-bit General Purpose Backup Registers, a 12-bit

ADC and a 12-bit DAC.

SAM3X8ERT has three software-selectable low-power modes: Sleep, Wait, and Backup. In Sleep mode, the processor

is stopped while all other functions can be kept running. In Wait mode, all clocks and functions are stopped but some

peripherals can be configured to wake up the system based on predefined conditions. In Backup mode, only the RTC,

RTT, and wake-up logic are kept running.

The SAM3X8ERT architecture is specifically designed to sustain high-speed data transfers. It includes a multi-layer bus

matrix as well as multiple SRAM banks, PDC and DMA channels that enable it to run tasks in parallel and maximize data throughput.

FEATURES

Core

• ARM Cortex-M3 revision 2.0 running at up to 84 MHz

• Memory Protection Unit (MPU)

• Thumb®-2 instruction set

• 24-bit SysTick Counter

• Nested Vector Interrupt Controller

Memories

• 512 Kbytes embedded Flash, 128-bit wide access, memory accelerator, dual bank

• 100 Kbytes embedded SRAM with dual banks

• 16 Kbytes ROM with embedded bootloader routines (UART, USB) and IAP routines

• Static Memory Controller (SMC): SRAM, NOR, NAND support. NFC with 4 Kbyte RAM buffer and ECC

• Flash Data Retention: 20 years with TA = 105 °C

System

• Embedded voltage regulator for single supply operation

• Power-on-Reset (POR), Brown-out Detector (BOD) and Watchdog for safe reset

• Quartz or ceramic resonator oscillators: 3 to 20 MHz main and optional low power 32.768 kHz for RTC or device

clock

• High precision 8/12 MHz factory trimmed internal RC oscillator with 4 MHz default frequency for fast device

startup

• Slow Clock Internal RC oscillator as permanent clock for device clock in low-power mode

• One PLL for device clock and one dedicated PLL for USB 2.0 High Speed Mini Host/Device

• Temperature Sensor

• Up to 17 peripheral DMA (PDC) channels and 6-channel central DMA plus dedicated DMA for High-Speed USB

Mini Host/Device and Ethernet MAC

Low-Power Modes

• Sleep, Wait and Backup modes, down to 2.5 ìA in Backup mode with RTC, RTT, and GPBR

Peripherals

• USB 2.0 Device/Mini Host: 480 Mbps, 4 Kbyte FIFO, up to 10 bidirectional Endpoints, dedicated DMA

• Up to 4 USARTs (ISO7816, IrDA®, Flow Control, SPI, Manchester and LIN support) and one UART

• 2 TWI (I2C compatible), up to 6 SPIs, 1 SSC (I2S), 1 HSMCI (SDIO/SD/MMC) with up to 2 slots

• 9-channel 32-bit Timer Counter (TC) for capture, compare and PWM mode, Quadrature Decoder Logic and 2-bit

Gray Up/Down Counter for Stepper Motor

• Up to 8-channel 16-bit PWM (PWMC) with Complementary Output, Fault Input, 12-bit Dead Time Generator

Counter for Motor Control

• 32-bit low-power Real-time Timer (RTT) and low-power Real-time Clock (RTC) with calendar and alarm features

• 256-bit General Purpose Backup Registers (GPBR)

• 16-channel 12-bit 1 msps ADC with differential input mode and programmable gain stage

• 2-channel 12-bit 1 msps DAC

• Ethernet MAC 10/100 (EMAC) with dedicated DMA

• 2 CAN Controllers with 8 Mailboxes

• True Random Number Generator (TRNG)

• Register Write Protection

I/O

• Up to 103 I/O lines with external interrupt capability (edge or level sensitivity), debouncing, glitch filtering and ondie

Series Resistor Termination

• Up to four 32-bit Parallel Input/Outputs (PIO)

Operating Range

• Temperature: -40 °C to +105 °C

• Single Supply Voltage: 3.0V to 3.6V

• Dual Supply Voltage

- VDDIO: 3.0V to 3.6V

- VDDCORE: 1.8V to 1.95V

Radiation Performances

• No Single Event Latch-up Below an LET Threshold of 62 MeV.cm2/mg @105 °C

• TID immunity successfully tested up to 30 Krads (si) according to ESCC-22900 test method

Packages

• 144-lead LQFP – 20 x 20 mm, pitch 0.5 mm

• 144-lead CQFP – 22 x 22 mm, pitch 0.5 mm

ESD

• HBM: 4000V

• CDM:

- LQFP144: 1000V

- CQFP144: 500V

Mass

• LQFP144: 1.37g

• CQFP144:

- Cropped and formed: 6.19g

- With tie-bar: 8.87g

更新时间:2025-10-15 10:48:00
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