General Description

The MIC94002 contains two silicon gate P-channel MOSFETs designed for low on-resistance, high-side switch applications.

The MIC94002 has a maximum on-resistance of 0.4Ω at 4.5V gate-to-source voltage. On-resistance can also be reduced to half by connecting both MOSFETs in parallel.

Improved ESD protection is provided by the gate protection network shown in the schematic diagram.

The MIC94002 is supplied in a low-profile version of the 8-lead SOIC package.

The MIC94002 can be assembled with the body not shorted to the sources for use in analog switch applications. Contact the factory for more information.

Features

• 15V minimum drain-to-source breakdown

• 0.4Ω maximum on-resistance at 4.5V gate-to-source voltage (each MOSFET)

• Functional at 2.7V gate-to-source voltage

• 0.063 maximum height

Applications

• High-side switch

• Power management

• Stepper motor control

• 1.8 PCMCIA disk drive VCC switch