Description

The A1211 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.

This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

Features

• HIGH EFFICIENCY: 16 mA at +5 Vdc

• LOW NOISE FIGURE: 2.8 dB at 5 Vdc (TYP.)

• LOW CURRENT DRAIN: 15.5 mA at 5 Vdc

• MEDIUM OUTPUT POWER: +11 dBm at 8 Vdc (TYP.)

• MEDIUM THIRD I.P.: +25 dBm at 8 Vdc