Description

M/A-COM’s PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of output power when operating with short pulse length (10µS), at 1 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

Features

• Designed for Short Pulse IFF Applications

• NPN Silicon Microwave Power Transistor

• Common Base Configuration

• Broadband Class C Operation

• High Efficiency Interdigitated Geometry

• Diffused Emitter Ballasting Resistors

• Gold Metalization System

• Internal Input and Output Impedance Matching

• Hermetic Metal/Ceramic Package