Description

M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the requirements for custom designing a MMICbased die or packaged product.

Features

• 0.5 µm MBE MESFET Technology for High Power Applications

• MMICs up to 18 GHz

• 100 mm wafer diameter

• Layout and design assistance

• Space qualification

• Custom test and packaging