Description and Applications

This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMIC process. This 8.0 µm I-region length device features 6 silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of a pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. The vertical Silicon Diode topology provides for a highly efficient heat transfer medium.

Features

• No Wirebonds Required

• Rugged Silicon-Glass Construction

• Silicon Nitride Passivation & Polymer Scratch

Protection

• Ultra-Low Parasitic Capacitance and Inductance

• Higher RF C.W. Power Handling

• Better Performance than Alternative Packaged

Devices