Description

M/A-COMs MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics.

They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling.

Features

• Lower Series Resistance, 5.2Ω

• Ultra Low Capacitance, 18 f F

• High Switching Cutoff Frequency, 50 GHz

• 3 Nanosecond Switching Speed

• Driven by Standard TTL

• Silicon Nitride Passivation

• Polyimide Scratch Protection