Description

The MA4PBL027 is a silicon beamlead PIN diode fabricated with M/A-COM Technology Solutions HMIC™ process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed.

Features

♦ No Wirebonds Required

♦ Rugged Silicon-Glass Construction

♦ Silicon Nitride Passivation

♦ Polymer Scratch and Impact Protection

♦ Low Parasitic Capacitance and Inductance

♦ Ultra Low Capacitance < 40 fF

♦ Excellent RC Product < 0.10 pS

♦ High Switching Cutoff Frequency > 110 GHz

♦ 110 Nanosecond Minority Carrier Lifetime

♦ Driven by Standard +5V TTL PIN Diode Driver