Description and Applications

M/A-COMs MA4AGP907 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics. The useable frequency range is 100 MHz to 40 GHz.

They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling.

Features

• Low Series Resistance, 3 Ω

• Ultra Low Capacitance, 25 fF

• High Switching Cutoff Frequency, 40 GHz

• 2 Nanosecond Switching Speed

• Can be Driven by Buffered TTL

• Silicon Nitride Passivation

• Polyamide Scratch Protection