Description

M/A-COM Tech’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features

• Balanced Design

• Excellent Input/Output Match

• Self-biased Architecture

• 23.0 dB Small Signal Gain

• 2.6 dB Noise Figure

• 100 On-Wafer RF, DC and Noise Figure Testing

• 100 Visual Inspection to MIL-STD-883 Method 2010

• RoHS* Compliant and 260°C Reflow Compatible