Description

The A32-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.

This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

Features

• LOW NOISE FIGURE: 2.5 dB (TYP.)

• HIGH OUTPUT LEVEL: 15.5 dBm (TYP.)

• MEDIUM THIRD ORDER IP: +25.0 dBm (TYP.)

• GaAs FET DESIGN