Product Description

The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

Features

• GaN depletion mode HEMT microwave transistor

• Common source configuration

• Broadband Class AB operation

• Thermally enhanced Cu/Mo/Cu package

• RoHS Compliant

• +50V Typical Operation

• MTTF of 114 years (Channel Temperature

Application

• Civilian and Military Pulsed Radar