Description

The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

Features

• GaN on SiC Depletion-Mode Transistor Technology

• Internally Matched

• Common-Source Configuration

• Broadband Class AB Operation

• RoHS* Compliant and 260 °C Reflow Compatible

• +50 V Typical Operation

• MTTF = 600 years (TJ

Applications

• Civilian Air Traffic Control (ATC), L-Band Secondary Radar for IFF and Mode-S Avionics.

• Military radar for IFF and Data Links.