Description and Applications

The MA4E2544L-1282 Series Surmount Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Features

• Ultra Low Parasitic Capacitance and Inductance

• Surface Mountable in Microwave Circuits , No Wire bonds Required

• Rugged HMIC Construction with Polyimide Scratch Protection

• Reliable, Multilayer Metallization with a Diffusion Barrier, 100 Stabilization Bake (300 °C, 16 hours)

• Lower Susceptibility to ESD Damage