Description and Applications

The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004” gold bond pads and sturdy construction.

Features

• Low IR (<100nA @ 1V, <500nA @ 3V)

• Designed for High Volume, Low Cost Detector

and Mixer Applications

• Low Noise Figure: 5.7 dB (SSB) at X-Band

• High Detector Sensitivity: -55 dBm TSS

• Low Capacitance: 0.14 pF (typ.)

• Low 1/F Noise

• RoHS* Compliant