Description

The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Features

• Extremely Low Parasitic Capitance and Inductance

• Extremely Small 0201 (600x300um) Footprint

• Surface Mountable in Microwave Circuits , No Wirebonds Required

• Rugged HMIC Construction with Polyimide Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion Barrier, 100 Stabilization Bake (300°C, 16 hours)

• Lower Susceptibility to ESD Damage