Dual/Quad Precision Op Amps

General Description The Maxim MXL1013 is a precision dual op amp that upgrades the performance of popular devices such as the MC1458/MC1558, LM158 and OP221. The Maxim MXL1014 is a precision quad op amp that directly upgrades designs in the industry-standard 14-pin DIP configuration and has speci

Dual/Quad Precision Op Amps

General Description The Maxim MXL1013 is a precision dual op amp that upgrades the performance of popular devices such as the MC1458/MC1558, LM158 and OP221. The Maxim MXL1014 is a precision quad op amp that directly upgrades designs in the industry-standard 14-pin DIP configuration and has speci

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.