3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3合1硅延迟线

The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3% for a 70ns to 100ns delay, and ±5% for a 150ns to 200ns delay. Relative to hybrid solutions, these devices offer enhan \n• Improved Second Source to DS1013 \n• Available in Space-Saving 8-Pin µMAX Package \n• 20mA Supply Current (vs. Dallas' 40mA) \n• Low Cost \n• Three Separate Buffered Delays \n• Delay Tolerance of ±2ns for MXD1013__010 through MXD1013__060 \n• TTL/CMOS-Compatible Logic \n• Leading- and Trailing-E;

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3% for a 70ns to 100ns delay, and ±5% for a 150ns to 200ns delay. Relative to hybrid solutions, th

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

3-in-1 Silicon Delay Line

General Description The MXD1013 contains three independent, monolithic, logic-buffered delay lines with delays ranging from 10ns to 200ns. Nominal accuracy is ±2ns for a 10ns to 60ns delay, ±3 for a 70ns to 100ns delay, and ±5 for a 150ns to 200ns delay. Relative to hybrid solutions, these device

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.